spp3407b description applications the spp3407b is the p-channel logic enhancement mode power field effect transistors are produced using high cell density , dmos trench technology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. z power management in note book z portable equipment z battery powered system z dc/dc converter z load switch z dsc z lcd display inverter features pin configuration(sot-23-3l) part marking ? -30v/-4.0a,r ds(on) = 70m ? @v gs =- 10v ? -30v/-3.2a,r ds(on) = 95m ? @v gs =-4.5v ? super high density cell design for extremely low r ds (on) ? exceptional on-resistance and maximum dc current capability ? sot-23-3l package design product specification 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
pin description pin symbol description 1 g gate 2 s source 3 d drain ordering information part number package part marking SPP3407BS23RGB sot-23-3l 07 yw week code : a ~ z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) SPP3407BS23RGB : tape reel ; pb ? free; halogen ? free absoulte maximum ratings (t a =25 unless otherwise noted) parameter symbol typical unit drain-source voltage v dss -30 v gate ?source voltage v gss 20 v t a =25 -3.6 continuous drain current(t j =150 ) t a =70 i d -3.0 a pulsed drain current i dm -15 a continuous source current(diode conduction) i s -1.0 a t a =25 1.25 power dissipation t a =70 p d 0.8 w operating junction temperature t j 150 storage temperature range t stg -55/150 thermal resistance-junction to ambient r ja 120 /w spp3407b product specification 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (t a =25 unles s otherwise noted) parameter symbol conditions min. typ max. unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =-250ua -30 gate threshold voltage v gs(th) v ds =v gs ,i d =-250ua -0.8 -2.5 v gate leakage current i gss v ds =0v,v gs =20v 100 na v ds =-24v,v gs =0v -1 zero gate voltage drain current i dss v ds =-24v,v gs =0v t j =55 -10 ua on-state drain current i d(on) v ds Q -5v,v gs =-10v -10 a v gs =- 10v,i d =-4.0a 0.062 0.070 drain-source on-resistance r ds(on) v gs =-4.5v,i d =-3.2a 0.085 0.095 ? forward transconductance gfs v ds =-5.0v,i d =-4.0a 10 s diode forward voltage v sd i s =-1.0a,v gs =0v -0.8 -1.2 v dynamic total gate charge q g 10 18 gate-source charge q gs 1.6 gate-drain charge q gd v ds =-15v,v gs =-10v i d = -3.5a 3.0 nc input capacitance c iss 450 output capacitance c oss 95 reverse transfer capacitance c rss v ds =-15v,v gs =0v f=1mhz 55 pf t d(on) 8 18 turn-on time t r 8 18 t d(off) 25 50 turn-off time t f v dd =-15v,r l =15 ? i d -1.0a,v gen =-10v r g =6 ? 25 35 ns spp3407b product specification 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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